Glasses and amorphous materials
Which correctly compares the properties of hydrogenated amorphous silicon (a-Si:H) and crystalline silicon?
- AIts disordered atomic arrangement means it absorbs almost no visible light, so it is used for transparent electrodes in place of ITO
- BIt absorbs visible light more strongly than crystalline silicon, so films under 1 µm suffice, but its electron mobility is 2 to 3 orders lower
- CIts electron mobility is higher than that of crystalline silicon, so it is widely used in place of it for transistors in high-speed microprocessors
Show answer and explanation
Answer: B. It absorbs visible light more strongly than crystalline silicon, so films under 1 µm suffice, but its electron mobility is 2 to 3 orders lower
Crystalline silicon is an indirect-gap semiconductor that absorbs the longer wavelengths of visible light weakly, so solar cells usually use substrates 100 µm thick or more. In a-Si:H there is no long-range periodicity, so the constraint of conserving momentum in a transition is relaxed and its visible absorption coefficient is larger than that of the crystal, letting a film 1 µm thick or less absorb the light. On the other hand, carriers are trapped in band-tail states created by the disordered network, so the electron mobility is about 1–10 cm²/(V·s), 2 to 3 orders of magnitude lower than the roughly 1400 cm²/(V·s) of crystalline silicon. It is therefore unsuited to high-speed logic circuits, but taking advantage of large-area deposition at about 300 °C, it has been used for pixel TFTs in liquid crystal displays and for thin-film solar cells. With a band gap of about 1.7 eV it absorbs visible light strongly and cannot be a transparent electrode.