Strengthening mechanisms and dislocations
Estimating the shear stress needed to displace the atomic planes above and below the slip plane all at once in a perfect crystal (the theoretical shear strength) as τ ≈ G/2π gives about 7.6 GPa for copper (shear modulus G = 48 GPa). Which is the correct reason why the shear stress at which a real copper single crystal begins to slip is orders of magnitude smaller, about 1 MPa?
- AWhen a dislocation in the crystal moves, bonds across the slip plane only need to be rearranged one row at a time, so the whole plane need not be displaced at once
- BVacancies in the crystal diffuse and gather on the slip plane, and atomic planes separate all at once where vacancies are concentrated, reducing the number of bonds to break
- CThe oxide film on the surface of the single crystal acts as a lubricant between atomic planes, so displacement begins at a force weaker than the internal bonds
Show answer and explanation
Answer: A. When a dislocation in the crystal moves, bonds across the slip plane only need to be rearranged one row at a time, so the whole plane need not be displaced at once
The theoretical shear strength assumes that all the atoms above and below the slip plane shift to the neighboring positions simultaneously; it is G/2π ≈ 7.6 GPa, and even with a more realistic form of the interatomic force it is about G/30, or about 1.6 GPa. Real yielding occurs at less than a thousandth of this because the crystal contains dislocations, and when a dislocation moves only the bonds at the dislocation line are rearranged in turn, so the displacement spreads a little at a time. Vacancy diffusion does not carry slip at room temperature; it is a mechanism that matters in high-temperature creep and similar processes. A surface oxide film, if anything, can hinder dislocations from leaving through the surface. Strengths close to the theoretical value have been measured in whiskers, which contain almost no dislocations.
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