A method of elemental analysis that measures the energies of characteristic X-rays excited by an electron beam with a semiconductor detector. It measures all elements simultaneously in a short time, but its resolution is lower than that of WDS.
Japanese name: EDS(エネルギー分散型X線分光法)
EDS (energy-dispersive X-ray spectroscopy) appears in 3 practice questions across 1 topic, including Materials characterization (SEM, TEM, XRD, XPS).
Answer: B. WDS has better energy resolution, while EDS can measure many elements simultaneously in a short time
EDS measures X-ray energies directly with a semiconductor detector, so it acquires the peaks of all elements simultaneously in a short time and is easily attached to an SEM. Its energy resolution is only about 130 eV, however, so it has difficulty separating close peaks such as Si Kα and W Mα, or S Kα and Mo Lα. WDS selects wavelengths by Bragg reflection from analyzing crystals, so its resolution is about 10 eV, an order of magnitude better, and it is also superior for detecting trace elements and for quantitative accuracy; but it takes time because the analyzing crystal angle must be scanned for each element. The choices saying that EDS has the better resolution or that WDS is the faster swap the characteristics of the two.
EDS measures X-ray energies directly with a semiconductor detector, so it acquires the peaks of all elements simultaneously in a short time and is easily attached to an SEM.
Which correctly compares EDS (energy-dispersive spectroscop…Determining the average composition to a depth of several micrometers is the job of techniques such as EDS in the SEM.
Which correctly describes the information depth of XPS (X-r…The detection limit of EDS is roughly 0.1 wt%, not sensitive enough to measure dopant concentrations.
In semiconductor failure analysis, which technique is best …SEM (scanning electron microscope) XPS (X-ray photoelectron spectroscopy) SIMS (secondary ion mass spectrometry) XRD (X-ray diffraction) Bragg's law Extinction rules Scherrer equation